Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-10
2007-07-10
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S689000, C257SE21159, C257SE21523
Reexamination Certificate
active
11029169
ABSTRACT:
Embodiments of the present invention are directed to the formation of microprobe tips elements having a variety of configurations. In some embodiments tips are formed from the same building material as the probes themselves, while in other embodiments the tips may be formed from a different material and/or may include a coating material. In some embodiments, the tips are formed before the main portions of the probes and the tips are formed in proximity to or in contact with a temporary substrate. Probe tip patterning may occur in a variety of different ways, including, for example, via molding in patterned holes that have been isotropically or anisotropically etched silicon, via molding in voids formed in over exposed photoresist, via molding in voids in a sacrificial material that have formed as a result of the sacrificial material mushrooming over carefully sized and located regions of dielectric material, via isotropic etching of a the tip material around carefully sized placed etching shields, via hot pressing, and the like.
REFERENCES:
patent: 6692145 (2004-02-01), Gianchandani et al.
patent: 6948940 (2005-09-01), Lindsey et al.
Arat Vacit
Chen Richard T.
Cohen Adam L.
Kim Ki-eun
Kruglick Ezekiel J. J.
Everhart Caridad
Microfabrica Inc.
Smalley Dennis R.
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