Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2003-03-07
2009-02-17
Zarneke, David A (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257SE31117, C257SE31119, C257SE23118
Reexamination Certificate
active
07492019
ABSTRACT:
This invention comprises a process for fabricating a micro mechanical structure in a sealed cavity having a multi-layer high stiffness cap. The high stiffness material used for the cap protects the underlying microstructure from destructive environmental forces inherent in the packaging process and from environmental damage.
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Everett Christopher
Foley & Lardner LLP
IC Mechanics Inc.
Maraia Joseph M.
Zarneke David A
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