Microlens process

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making named article

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430313, 216 2, 216 26, G03F 700, G02B 300

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active

060015403

ABSTRACT:
A process is described for forming a microlens, either directly on a substrate or as part of a process to manufacture an optical imaging array. The process starts with the deposition of a layer of silicon oxide over the substrate, said layer being the determinant of the lens to substrate distance. This is followed by layers of polysilicon and silicon nitride. The latter is patterned to form a mask which protects the poly, except for a small circular opening, during its oxidation (under the same conditions as used for LOCOS). The oxide body that is formed is lens shaped, extending above the poly surface by about the same amount as below it, and just contacting the oxide layer. After the silicon nitride and all poly have been removed, the result is a biconvex microlens. In a second embodiment, a coating of SOG is provided that has a thickness equal to half the microlens thickness, thereby converting the latter to a plano-convex lens.

REFERENCES:
patent: 5118924 (1992-06-01), Mehra et al.
patent: 5574293 (1996-11-01), Arai et al.
patent: 5871653 (1999-02-01), Ling
Sakakibara et al, "A1format 1.5M pixel IT-CCD image sensor for a HDTV camera system" IEEE Trans on Consumer Electronics, vol. 37, No. 3, Aug. 1991, p. 487-493.
Sano et al, "Submicron Spaced Lens Array Process Technology For A High Photosensitivity CCD Image Sensor", IEDM, 1990, p283-6.
Furukawa et al, "A 1/3 inch 38 OK pixil IT CCD image sensor", IEEE Trans on Consumer Electronics, vol. 38, No. 3, Aug. 1992, p595,600.
Deguchi et al. "Microlens Design Using Simulation Program For CCD Image Sensor" IEEE Transactions on Consumer Electronics, vol. 38, No. 3, Aug. 1992, p583-589.
Tsukamato et al, "High Sensitivity Pixel Technology for a 1/4 inch PAL 43 OK pixel IT-CCD", pub 1996 Custom IC Conf. p39-40.

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