Microelectronic device having floating gate protective layer...

Details Microelectronic device having floating gate protective layer... Microelectronic device having floating gate protective layer...

2007-04-03

2007-04-03

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C365S182000

Reexamination Certificate

active

10853455

ABSTRACT:
A method of manufacturing a microelectronic device including forming a memory cell having a floating gate located over a substrate, a dielectric layer over the floating gate, and a control gate located over a portion of the dielectric layer, wherein a portion of the dielectric layer is laterally disposed from the control gate. A protective layer is formed over the control gate and the dielectric layer. A mask having an opaque portion over the dielectric layer portion and an opening over the control gate is provided, and the protective layer is patterned employing the mask.

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