Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Patent
1997-10-03
1999-10-19
Mulpuri, Savitri
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
438700, 438710, 438745, H01L 2144
Patent
active
059703156
ABSTRACT:
The present invention is directed to a process for fabricating a microelectromechanical device from a substrate carrying at least one layer of a non-erodible material laid out to form at least a portion of the microelectromechanical device, at least one layer of an erodible material, and at least one sacrificial layer. The process includes the step of using the layer of non-erodible material as a mask and anistropically etching any of the layer of erodible material not occluded by the layer of non-erodible material. The process also includes the step of isotropically etching the sacrificial layer under at least a beam portion of the microelectromechanical device to free the beam portion of the microelectromechanical device from the substrate.
REFERENCES:
patent: 4668865 (1987-05-01), Gimzewski et al.
patent: 4687544 (1987-08-01), Bersin
patent: 4912822 (1990-04-01), Zdeblick et al.
patent: 5036490 (1991-07-01), Kajimura et al.
patent: 5049775 (1991-09-01), Smits
patent: 5082801 (1992-01-01), Nagata
patent: 5173151 (1992-12-01), Namose
patent: 5216631 (1993-06-01), Sliwa, Jr.
patent: 5235187 (1993-08-01), Arney et al.
patent: 5310624 (1994-05-01), Ehrlich
patent: 5375033 (1994-12-01), MacDonald
patent: 5396066 (1995-03-01), Ikeda et al.
patent: 5475318 (1995-12-01), Marcus et al.
patent: 5658698 (1997-08-01), Yagi et al.
patent: 5844251 (1998-12-01), MacDonald et al.
Carley L. Richard
Fedder Gary K.
Reed Michael L.
Santhanam Suresh
Carnegie Mellon University
Mulpuri Savitri
LandOfFree
Microelectromechanical structure and process of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Microelectromechanical structure and process of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microelectromechanical structure and process of making same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2068206