Micro-feature fill process and apparatus using...

Details Micro-feature fill process and apparatus using... Micro-feature fill process and apparatus using...

2007-04-17

2007-04-17

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S637000

Reexamination Certificate

active

11035730

ABSTRACT:
A method is provided for depositing a silicon-containing film in a micro-feature on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed in a micro-feature by providing a substrate in a process chamber of a processing system, and exposing a hexachlorodisilane (HCD) process gas to the substrate. A processing tool containing a processing system for forming a silicon-containing film in a micro-feature using a silicon and chlorine-containing gas such as a HCD process gas is provided. Alternatively, the micro-feature can be exposed to DCS, SiCl4, and SiHCl3gases. Alternatively, the micro-feature can be exposed to (SiH4+HCl).

REFERENCES:
patent: 5766342 (1998-06-01), Shibuya et al.
patent: 5830330 (1998-11-01), Lantsman
patent: 6184158 (2001-02-01), Shufflebotham et al.
patent: 6232196 (2001-05-01), Raaijmakers et al.
patent: 2004/0009336 (2004-01-01), Marcadal et al.
patent: 2004/0188239 (2004-09-01), Robison et al.
patent: 432493 (2001-05-01), None
patent: 477075 (2002-02-01), None

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