Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2008-08-29
2010-06-15
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S494000, C438S695000, C438S300000
Reexamination Certificate
active
07737007
ABSTRACT:
In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsilane, a first etchant, and hydrogen gas to deposit a first silicon-containing layer thereon. The first silicon-containing layer may be selectively deposited on the source/drain regions of the substrate while the first silicon-containing layer may be etched away on the surface of the dielectric materials of the substrate. Subsequently, the process further provides exposing the substrate to a second process gas comprising dichlorosilane and a second etchant to deposit a second silicon-containing layer selectively over the surface of the first silicon-containing layer on the substrate.
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Dalida Nicholas C.
Kim Yihwan
Samoilov Arkadii V.
Sanchez Errol
Applied Materials Inc.
Mulpuri Savitri
Patterson & Sheridan
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