Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2006-03-10
2011-11-01
Olsen, Allan (Department: 1716)
Semiconductor device manufacturing: process
Chemical etching
C216S059000, C257SE21252, C257S321000, C438S005000
Reexamination Certificate
active
08048806
ABSTRACT:
In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.
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Burns Douglas H.
Delgadino Gerardo A.
Gold Ezra R.
Hoffman Daniel J.
Kutney Michael C.
Applied Materials Inc.
Blakely & Sokoloff, Taylor & Zafman
Olsen Allan
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