Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-17
2006-10-17
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S308000, C438S230000, C438S530000, C257S336000, C257SE21435
Reexamination Certificate
active
07122435
ABSTRACT:
A method (100) of forming a transistor includes forming a gate structure (106, 108) over a semiconductor body and forming recesses (112) substantially aligned to the gate structure in the semiconductor body. Amorphous silicon regions are then formed (114) in the recesses. The amorphous silicon regions are re-crystallized. Sidewall spacers are formed (118) over lateral edges of the gate structure. The method continues by implanting source and drain regions in the semiconductor body (120) after forming the sidewall spacers. The re-crystallized silicon regions formed in the recesses reside close to the transistor channel and serve to facilitate improved carrier mobility in NMOS type transistor devices.
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Bu Haowen
Chidambaram PR
Fulk Steven J.
Keagy Rose Alyssa
Smith Bradley K.
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