Methods of selectively forming epitaxial semiconductor layer...

Details Methods of selectively forming epitaxial semiconductor layer... Methods of selectively forming epitaxial semiconductor layer...

2005-06-16

2009-11-03

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C257SE21198, C257S288000

Reexamination Certificate

active

07611973

ABSTRACT:
In methods of selectively forming an epitaxial semiconductor layer on a single crystalline semiconductor and semiconductor devices fabricated using the same, a single crystalline epitaxial semiconductor layer and a non-single crystalline epitaxial semiconductor layer are formed on a single crystalline semiconductor and a non-single crystalline semiconductor pattern respectively, using a main semiconductor source gas and a main etching gas. The non-single crystalline epitaxial semiconductor layer is removed using a selective etching gas. The main gases and the selective etching gas are alternately and repeatedly supplied at least two times to selectively form an elevated single crystalline epitaxial semiconductor layer having a desired thickness only on the single crystalline semiconductor. The selective etching gas suppresses formation of an epitaxial semiconductor layer on the non-single crystalline semiconductor pattern.

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