Methods of reducing photoresist distortion while etching in...

Details Methods of reducing photoresist distortion while etching in... Methods of reducing photoresist distortion while etching in...

2005-09-13

2005-09-13

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask resist contains organic compound

C216S067000, C216S079000, C216S080000, C438S710000, C438S723000, C438S725000

Reexamination Certificate

active

06942816

ABSTRACT:
A method for substantially reducing photoresist wiggling while etching a layer on a substrate is provided. The substrate having thereon the layer disposed below a photoresist mask is introduced into the plasma processing chamber. An etchant source gas mixture is flowed into the plasma processing chamber, where the etchant source gas mixture comprises xenon and an active etchant, where a flow rate of the xenon is at least 35% of etchant source gas mixture. A plasma is struck from the etchant source gas mixture. The layer is etched with the plasma, where the flow rate of xenon reduces photoresist wiggling.

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patent: 2003/0232504 (2003-12-01), Eppler et al.
International Search Report, dated Dec. 17, 2004.

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