Methods of manufacturing semiconductor memory devices

Details Methods of manufacturing semiconductor memory devices Methods of manufacturing semiconductor memory devices

2011-06-28

2011-06-28

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S142000, C438S197000, C438S200000, C438S217000, C438S288000, C257SE21682

Reexamination Certificate

active

07968407

ABSTRACT:
A method of manufacturing a semiconductor memory device, the method including forming a tunnel insulation layer on a substrate, forming a preliminary charge trapping layer on the tunnel insulation layer, forming an etch stop layer on the preliminary charge trapping layer, wherein a portion of the preliminary charge trapping layer is not covered by the etch stop layer, removing the exposed portion of the preliminary charge trapping layer to form a charge trapping layer having a uniform thickness, forming a dielectric layer on the charge trapping layer, and forming a gate electrode on the dielectric layer.

REFERENCES:
patent: 5889304 (1999-03-01), Watanabe et al.
patent: 6034395 (2000-03-01), Tripsas et al.
patent: 6281050 (2001-08-01), Sakagami
patent: 6927447 (2005-08-01), Choi et al.
patent: 6933198 (2005-08-01), Chu et al.
patent: 7348267 (2008-03-01), Eun et al.
patent: 2005/0116279 (2005-06-01), Koh
patent: 2005/0255654 (2005-11-01), Lee et al.
patent: 2006/0192245 (2006-08-01), Oosawa
patent: 2007/0148872 (2007-06-01), Jung
patent: 10-022403 (1998-01-01), None
patent: 2006-237434 (2006-09-01), None
patent: 10-2002-0050918 (2002-06-01), None
patent: 10-2006-0124863 (2006-12-01), None
patent: 10-0655289 (2006-12-01), None

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