Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-08-03
2010-11-30
Fahmy, Wael M (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S270000, C438S271000, C438S589000, C257S510000, C257S330000, C257S332000, C257S151000, C257S153000, C257S266000, C257S574000, C257SE21205, C257SE21624, C257SE21638, C257SE21176, C257SE21429, C257SE21443, C257SE21409
Reexamination Certificate
active
07842572
ABSTRACT:
A method of manufacturing a local recess channel transistor in a semiconductor device. A hard mask layer is formed on a semiconductor substrate that exposes a portion of the substrate. The exposed portion of the substrate is etched using the hard mask layer as an etch mask to form a recess trench. A trench spacer is formed on the substrate along a portion of sidewalls of the recess trench. The substrate along a lower portion of the recess trench is exposed after the trench spacer is formed. The exposed portion of the substrate along the lower portion of the recess trench is doped with a channel impurity to form a local channel impurity doped region surrounding the lower portion of the recess trench. A portion of the local channel impurity doped region surrounding the lower portion of the recess trench is doped with a Vthadjusting impurity to form a Vthadjusting impurity doped region inside the local channel impurity doped region. The width of the lower portion of the recess trench is expanded. A gate insulating layer is formed on the substrate in the recess trench. A gate electrode layer is formed on the gate insulating layer in the recess trench. A portion of the gate insulating layer and the gate electrode layer is etched to form a gate.
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Jang Se-myeong
Oh Yong-chul
Yoshida Makoto
Armand Marc
Fahmy Wael M
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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