Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-05-22
2010-11-23
Smith, Zandra (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S042000, C438S044000, C438S360000, C438S363000
Reexamination Certificate
active
07838372
ABSTRACT:
Methods of manufacturing semiconductor devices and structures thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming recesses in a first region and a second region of a workpiece. The first region of the workpiece is masked, and the recesses in the second region of the workpiece are filled with a first semiconductive material. The second region of the workpiece is masked, and the recesses in the first region of the workpiece are filled with a second semiconductive material.
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Han Jin-Ping
Lai Chung Woh
Utomo Henry
Yang Jong Ho
Chartered Semiconductor Manufacturing Ltd.
Infineon - Technologies AG
International Business Machines - Corporation
Lee Jae
Samsung Electronics Co,. Ltd.
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