Methods of manufacturing semiconductor devices

Details Methods of manufacturing semiconductor devices Methods of manufacturing semiconductor devices

2011-01-11

2011-01-11

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21632

Reexamination Certificate

active

07867867

ABSTRACT:
Methods of manufacturing a semiconductor device include forming an NMOS transistor on a semiconductor substrate, forming a first interlayer dielectric layer on the NMOS transistor, and dehydrogenating the first interlayer dielectric layer. Dehydrogenating the first interlayer dielectric layer may change a stress of the first interlayer dielectric layer. In particular, the first interlayer dielectric layer may have a tensile stress of 200 MPa or more after dehydrogenization. Semiconductor devices including dehydrogenated interlayer dielectric layers are also provided.

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Translation of Preliminary Notice of First Office Action for corresponding Taiwanese Application No. 09514118 dated Jan. 5, 2010.

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