Methods of manufacturing non-volatile memory devices having...

Details Methods of manufacturing non-volatile memory devices having... Methods of manufacturing non-volatile memory devices having...

2008-12-31

2010-12-28

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S257000, C438S593000, C257SE29129, C257SE29300, C257SE21179, C257SE21422, C257SE21680

Reexamination Certificate

active

07858464

ABSTRACT:
Methods of manufacturing non-volatile memory devices that can reduce or prevent loss of charges stored in a charge storage layer and/or that can improve charge storage capacity by neutral beam irradiation of an insulating layer are disclosed. The methods include forming a tunneling insulating layer on a substrate, forming a charge storage layer on the tunneling insulating layer, forming a blocking insulating layer on the charge storage layer, irradiating the blocking insulating layer and/or the tunneling insulating layer with a neutral beam, and forming a gate conductive layer on the blocking insulating layer.

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