Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into...
Reexamination Certificate
2007-09-11
2007-09-11
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
C438S511000, C438S512000, C438S513000, C438S514000, C438S515000, C438S516000, C438S517000, C438S518000, C438S519000, C438S520000, C438S521000, C438S522000, C438S523000, C438S524000, C438S525000, C438S526000, C438S527000, C438S528000, C438S529000, C438S530000, C438S531000, C438S532000, C438S533000, C438S534000, C438S536000, C438S537000, C438S538000, C438S539000, C438S540000, C438S541000, C438S480000, C438S721000, C438S751000, C438S197000, C438S199000, C257SE21297, C257SE21298, C257SE21299, C257SE21316
Reexamination Certificate
active
10872343
ABSTRACT:
A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the semi-conductive layer. At least a portion of the semi-conductive layer is doped by implanting through the conductive layer. The semi-conductive layer and the conductive layer may then be annealed.
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Chang Chih-Wei
Chuang Chiang-Ming
Lin Chen-Tung
Shue Shau-Lin
Wang Mei-Yun
Ahmadi Mohsen
Haynes and Boone LLP
Lebentritt Michael
Taiwan Semiconductor Manufacturing Company , Ltd.
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