Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2007-03-20
2009-11-03
Tran, Minh-Loan T (Department: 2826)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Packaging or treatment of packaged semiconductor
C438S029000, C438S653000, C257S098000, C257S099000, C257S751000, C257SE33068, C257SE33069
Reexamination Certificate
active
07611915
ABSTRACT:
Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
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Allen Scott T.
Andrews Peter S.
Edmond John A.
Slater, Jr. David B.
Williams Bradley E.
Cree Inc.
Myers Bigel Sibley & Sajovec P.A.
Tran Minh-Loan T
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