Methods of manufacturing integrated circuit devices having...

Details Methods of manufacturing integrated circuit devices having... Methods of manufacturing integrated circuit devices having...

2005-05-24

2005-05-24

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S638000, C438S640000

Reexamination Certificate

active

06897109

ABSTRACT:
The present invention provides methods of forming contact holes and integrated circuit devices having the same. A conductive plug is formed on a substrate. A first insulating layer is formed on the conductive plug and a second insulating layer is formed on the first insulating layer. The second insulating layer is etched to expose at least a portion of the first insulating layer and the first insulating layer is etched to expose at least a portion of the conductive plug.

REFERENCES:
patent: 5726083 (1998-03-01), Takaishi
patent: 6255686 (2001-07-01), Takeuchi et al.
patent: 6287957 (2001-09-01), Linliu
patent: 6521524 (2003-02-01), Wang et al.
patent: 6528368 (2003-03-01), Park
patent: 6759704 (2004-07-01), Park
patent: 11-168199 (2001-07-01), None

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