Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-22
2008-07-22
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S261000, C438S264000
Reexamination Certificate
active
07402491
ABSTRACT:
A method of manufacturing a semiconductor device can include forming a tunnel oxide layer on a substrate, forming a floating gate on the tunnel oxide layer and forming a dielectric layer pattern on the floating gate using an ALD process. The dielectric layer pattern can include a metal precursor that includes zirconium and an oxidant. A control gate can be formed on the dielectric layer pattern. The semiconductor device can include the dielectric layer pattern provided herein.
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Notice to Submit a Response for Korean patent application No. 10-200-0086419 mailed on Jan. 31, 2006.
English Translation of the Notice to Submit a Response for Korean patent application No. 10-200-0086419 mailed on Jan. 31, 2006.
Choi Han-mei
Kim Sung-tae
Kim Young-sun
Lee Seung-Hwan
Park Ki-yeon
Myers Bigel Sibley & Sajovec P.A.
Picardat Kevin M
Samsung Electronics Co,. Ltd.
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