Methods of improving single layer resist patterning scheme

Details Methods of improving single layer resist patterning scheme Methods of improving single layer resist patterning scheme

2006-01-31

2008-08-05

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

C430S328000, C430S330000, C430S942000

Reexamination Certificate

active

07407736

ABSTRACT:
Methods for improving a single layer resist (SLR) patterning scheme, and in particular, its SLR layer and anti-reflective coating (ARC) etch selectivity, are disclosed. In one method, a patterned SLR layer over an anti-reflective coating (ARC) is provided and at least a portion of the patterned SLR layer and a portion of the ARC are exposed to radiation. The radiation may include, for example, an electron beam or an ion beam. The radiation exposure selectively breaks the polymer chains of the ARC and reduces the thickness of the ARC due to the loss of volatile function groups and free volume. As a result, the etch rate of the ARC is increased due to the conversion from polymer to monomer. Therefore, less resist will be consumed during, for example, an ARC open etch.

REFERENCES:
patent: 3745358 (1973-07-01), Firtz et al.
patent: 3874916 (1975-04-01), Livesay et al.
patent: 3887811 (1975-06-01), Livesay
patent: 3922546 (1975-11-01), Livesay
patent: 3983401 (1976-09-01), Livesay
patent: 4528452 (1985-07-01), Livesay
patent: 5003178 (1991-03-01), Livesay
patent: 6132814 (2000-10-01), Livesay et al.
patent: 6210856 (2001-04-01), Lin et al.
patent: 6319655 (2001-11-01), Wong et al.
patent: 6407399 (2002-06-01), Livesay
patent: 6489225 (2002-12-01), Ross et al.
patent: 6607991 (2003-08-01), Livesay et al.
patent: 6753129 (2004-06-01), Livesay et al.
patent: 6831284 (2004-12-01), Demos et al.
patent: 6890825 (2005-05-01), Ross et al.
patent: 6900001 (2005-05-01), Livesay et al.
patent: 6939664 (2005-09-01), Huang et al.
patent: 7361444 (2008-04-01), Angelopoulos et al.
patent: 2001/0016302 (2001-08-01), Hirayanagi et al.
patent: 2004/0152024 (2004-08-01), Livesay et al.
Chung-Hsi J. Wu, et al., “Investigation on the Mechanism of the 193nm Resist Linewidth Reduction During the SEM Measurement”, Proceedings of SPIE, vol. 4345 (2001).

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