Methods of forming zirconium aluminum oxide

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S287000, C438S785000, C427S255310, C427S255280, C257SE29158

Reexamination Certificate

active

07625794

ABSTRACT:
A dielectric layer having atomic layer deposited zirconium aluminum oxide and a method of fabricating such a dielectric layer may produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The zirconium aluminum oxide may be formed in an atomic layer deposition process that includes pulsing a zirconium-containing precursor onto a substrate and pulsing an aluminum-containing precursor.

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