Methods of forming silicon nano-crystals using plasma ion...

Details Methods of forming silicon nano-crystals using plasma ion... Methods of forming silicon nano-crystals using plasma ion...

2006-06-14

2008-11-11

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C977S890000

Reexamination Certificate

active

07449398

ABSTRACT:
In a method for forming silicon nano-crystals using plasma ion implantation and a semiconductor memory device using the same, silicon nano-crystals may be formed using plasma ion implantation. An insulating layer may be formed on a substrate, and ions may be implanted into the insulating layer using hydrogen and a gas including silicon. Silicon nano-crystals may be formed using a heat treatment.

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Effects of Ion Bombardment upon Microcrystalline Silicon Growth□□B. Kalache, R. Brenot, V. Tripathi, S. Kumar, R. Vanderhaghen, P. Rocia I. Cabarrocas, 2001, Scitec Publications, Switzerland, Solid State Phenomena vols. 80-81, pp. 71-76.
Korean Office Action for counterpart Korean Application No. 10-2005-0051995 dated Aug. 30, 2006.
English Translation of Korean Office Action for counterpart Korean Application No. 10-2005-0051995 dated Aug. 30, 2006.

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