Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-26
2007-06-26
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C438S591000, C438S593000
Reexamination Certificate
active
10012619
ABSTRACT:
The invention encompasses a method of forming a silicon-doped aluminum oxide. Aluminum oxide and silicon monoxide are co-evaporated. Subsequently, at least some of the evaporated aluminum oxide and silicon monoxide is deposited on a substrate to form the silicon-doped aluminum oxide on the substrate. The invention also encompasses methods of forming transistors and flash memory devices.
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Wikipedia (an online dictionary) (http://en.wikipedia.org/wiki/sapphire).
Ahn Kie Y.
Forbes Leonard
Micro)n Technology, Inc.
Smoot Stephen W.
Wells St. John P.S.
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