Methods of forming semiconductor structures

Details Methods of forming semiconductor structures Methods of forming semiconductor structures

2007-08-28

2007-08-28

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S242000, C438S391000, C438S596000

Reexamination Certificate

active

10800196

ABSTRACT:
The invention includes semiconductor structures having buried silicide-containing bitlines. Vertical surround gate transistor structures can be formed over the bitlines. The surround gate transistor structures can be incorporated into memory devices, such as, for example, DRAM devices. The invention can be utilized for forming 4F2DRAM devices.

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