Methods of forming semiconductor devices

Details Methods of forming semiconductor devices Methods of forming semiconductor devices

2009-09-14

2011-11-01

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S197000, C438S719000, C438S753000, C257SE21027, C257SE21042, C257SE21043, C257SE21051, C257SE21058, C257SE21077, C257SE21227, C257SE21231, C257SE21248, C257SE21267, C257SE21247

Reexamination Certificate

active

08048787

ABSTRACT:
Provided are a semiconductor device and a method of forming the same. The method may include forming a gate dielectric layer including a plurality of elements on a substrate; supplying a specific element to the gate dielectric layer; forming a product though reacting the specific element with at least one of the plurality of elements; and removing the product.

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patent: 1020060093618 (2006-08-01), None

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