Methods of forming semiconductor devices

Details Methods of forming semiconductor devices Methods of forming semiconductor devices

2010-06-16

2011-10-18

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S257000, C438S591000, C257SE21179, C257SE21422, C257SE21679

Reexamination Certificate

active

08039345

ABSTRACT:
A method of forming a semiconductor device may include forming a first pattern on a substrate, and forming a first dielectric layer on the first pattern. The first pattern may be between portions of the first dielectric layer and the substrate. A second dielectric layer may be formed on the first dielectric layer, and the first dielectric layer may be between the first pattern and the second dielectric layer. A second pattern may be formed on the second dielectric layer. Portions of the second dielectric layer may be exposed by the second pattern, and the first and second dielectric layers may be between portions of the first and second patterns. The exposed portions of the second dielectric layer may be isotropically etched.

REFERENCES:
patent: 7122415 (2006-10-01), Jang et al.
patent: 2005/0287812 (2005-12-01), Wang et al.
patent: 2008/0085584 (2008-04-01), Noh et al.
patent: 1020050070708 (2005-07-01), None
patent: 1020080040214 (2008-05-01), None

Affiliated with

Also associated with

Rating

Methods of forming semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4302272