Methods of forming semiconductor constructions

Details Methods of forming semiconductor constructions Methods of forming semiconductor constructions

2006-10-17

2006-10-17

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C438S386000, C438S393000, C438S637000, C438S672000, C438S700000

Reexamination Certificate

active

07122425

ABSTRACT:
The invention includes semiconductor constructions containing vertically-extending pillars, and methods for forming such constructions. The vertically-extending pillars can be incorporated into transistor devices, and can contain vertically-extending channel regions of the transistor devices. The transistor devices can be incorporated into integrated circuitry, and in some aspects are incorporated into memory constructions, such as, for example, dynamic random access memory (DRAM) constructions.

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