Methods of forming semiconductor active regions having channel-s

Details Methods of forming semiconductor active regions having channel-s Methods of forming semiconductor active regions having channel-s

1996-11-12

1998-06-30

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438228, 438333, 438276, 438291, 438298, 438450, H01L 218238

Patent

active

057733368

ABSTRACT:
Methods of forming semiconductor active regions having channel-stop regions therein include the steps of forming an oxide layer and first nitride layer on a face of a semiconductor substrate and then patterning the first nitride layer to expose first portions of the oxide layer. The patterned first nitride layer is then used as a mask during implantation of dopants of second conductivity type into the substrate. A second nitride layer is then deposited on the exposed first portions of the oxide layer and on the first nitride layer. A second photoresist layer is then patterned and used as a mask to etch the second nitride layer and patterned first nitride layer, to expose second portions of the oxide layer. A third photoresist layer is then patterned to cover the first portions of the oxide layer. The patterned third photoresist layer and remaining portions of the patterned first and second nitride layers are then used as implant masks during implantation of second conductivity type dopants. These dopants are implanted to form relatively shallow preliminary channel-stop regions of second conductivity type in the substrate. A fourth photoresist layer is then patterned to expose the first portions of the oxide layer. Then, using the patterned fourth photoresist layer and the patterned second nitride layer as implant masks, first conductivity type dopants are implanted through the oxide layer and into the substrate. These dopants are implanted to form relatively shallow preliminary channel-stop regions of first conductivity type in the preliminary active regions of second conductivity type, adjacent the preliminary channel-stop regions of second conductivity type. The substrate then undergoes a thermal treatment to diffuse the dopants in the preliminary active and channel-stop regions, into the substrate.

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