Methods of forming self-aligned floating gates using...

Details Methods of forming self-aligned floating gates using... Methods of forming self-aligned floating gates using...

2005-07-11

2008-12-02

Smith, Matthew S. (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S424000, C438S673000, C438S713000, C438S978000

Reexamination Certificate

active

07459364

ABSTRACT:
A method of forming a floating gate of a non-volatile memory device can include etching a mask pattern formed between field isolation regions in a field isolation pattern on a substrate to recess a surface of the mask pattern below an upper surface of adjacent field isolation regions to form an opening having a width defined by a side wall of the adjacent field isolation regions above the surface. Then the adjacent field isolation regions is etched to increase the width of the opening.

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