Methods of forming pluralities of capacitors

Details Methods of forming pluralities of capacitors Methods of forming pluralities of capacitors

2008-01-22

2008-01-22

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C438S386000, C257SE21648

Reexamination Certificate

active

11006331

ABSTRACT:
A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes comprising sidewalls. The plurality of capacitor electrodes are supported at least in part with a retaining structure which engages the sidewalls, with the retaining structure comprising a fluid previous material. A capacitor dielectric material is deposited over the capacitor electrodes through the fluid previous material of the retaining structure effective to deposit capacitor dielectric material over portions of the sidewalls received below the retaining structure. Capacitor electrode material is deposited over the capacitor dielectric material through the fluid previous material of the retaining structure effective to deposit capacitor electrode material over at least some of the capacitor dielectric material received below the retaining structure. Integrated circuitry independent of method of fabrication is also contemplated.

REFERENCES:
patent: 5236860 (1993-08-01), Fazan et al.
patent: 5340763 (1994-08-01), Dennison
patent: 5401681 (1995-03-01), Dennison et al.
patent: 5498562 (1996-03-01), Dennison et al.
patent: 5604696 (1997-02-01), Takaishi
patent: 5605857 (1997-02-01), Jost et al.
patent: 5652164 (1997-07-01), Dennison et al.
patent: 5654222 (1997-08-01), Sandhu et al.
patent: 5686747 (1997-11-01), Jost et al.
patent: 5702990 (1997-12-01), Jost et al.
patent: 5705838 (1998-01-01), Jost et al.
patent: 5767561 (1998-06-01), Frei et al.
patent: 5821140 (1998-10-01), Jost et al.
patent: 5900660 (1999-05-01), Jost et al.
patent: 5955758 (1999-09-01), Sandhu et al.
patent: 5981350 (1999-11-01), Geusic et al.
patent: 5990021 (1999-11-01), Prall et al.
patent: 6037218 (2000-03-01), Dennison et al.
patent: 6110774 (2000-08-01), Jost et al.
patent: 6133620 (2000-10-01), Uochi
patent: 6180450 (2001-01-01), Dennison
patent: 6204143 (2001-03-01), Roberts et al.
patent: 6204178 (2001-03-01), Marsh
patent: 6303956 (2001-10-01), Sandhu et al.
patent: 6323528 (2001-11-01), Yamazaki et al.
patent: 6383861 (2002-05-01), Gonzalez et al.
patent: 6403442 (2002-06-01), Reinberg
patent: 6432472 (2002-08-01), Farrell et al.
patent: 6458925 (2002-10-01), Fasano
patent: 6459138 (2002-10-01), Reinberg
patent: 6617222 (2003-09-01), Coursey
patent: 6667502 (2003-12-01), Agarwal et al.
patent: 6673693 (2004-01-01), Kirchhogg
patent: 6709978 (2004-03-01), Geusic et al.
patent: 6812513 (2004-11-01), Geusic et al.
patent: 6844230 (2005-01-01), Reinberg
patent: 6927122 (2005-08-01), Geusic et al.
patent: 7042040 (2006-05-01), Horiguchi
patent: 7073969 (2006-07-01), Kamm
patent: 7074669 (2006-07-01), Iijima et al.
patent: 7081384 (2006-07-01), Birner et al.
patent: 7084451 (2006-08-01), Forbes et al.
patent: 7125781 (2006-10-01), Manning et al.
patent: 7179706 (2007-02-01), Patraw et al.
patent: 2001/0012223 (2001-08-01), Kohyama
patent: 2001/0026974 (2001-10-01), Reinberg
patent: 2002/0030221 (2002-03-01), Sandhu et al.
patent: 2002/0039826 (2002-04-01), Reinberg
patent: 2002/0086479 (2002-07-01), Reinberg
patent: 2002/0090779 (2002-07-01), Jang
patent: 2002/0098654 (2002-07-01), Durcan et al.
patent: 2002/0153614 (2002-10-01), Ema et al.
patent: 2002/0163026 (2002-11-01), Park
patent: 2003/0153146 (2003-08-01), Won et al.
patent: 2003/0178684 (2003-09-01), Nakamura
patent: 2003/0190782 (2003-10-01), Ko et al.
patent: 2003/0227044 (2003-12-01), Park
patent: 2004/0056295 (2004-03-01), Argarwal
patent: 2004/0188738 (2004-09-01), Farnworth et al.
patent: 2005/0158949 (2005-07-01), Manning
patent: 2005/0287780 (2005-12-01), Manning et al.
patent: 2006/0046420 (2006-03-01), Manning
patent: 2006/0051918 (2006-03-01), Busch et al.
patent: 2006/0115951 (2006-06-01), Mosley
patent: 2006/0121672 (2006-06-01), Basceri et al.
patent: 2006/0186451 (2006-08-01), Dusberg et al.
patent: 4447804 (2002-01-01), None
patent: 04/0027898 (2004-08-01), None
patent: 2004/ 027898 (2004-08-01), None
patent: 2004/ 040252 (2004-12-01), None
patent: WO 2005/024936 (2005-03-01), None
patent: 06/06806 (2006-02-01), None
U.S. Appl. No. 11/360,540, filed Feb. 2006, Rana.
U.S. Appl. No. 11/580,418, filed Oct. 2006, Raghu et al.
Li, X. and Bohn, P.W., “Metal-assisted chemical etching in HF/H2O2produces porous silicon”, Applied Physics Letters, vol. 77, No. 16, Oct. 16, 2000, pp. 2572-2574.
U.S. Appl. No. 11/083,489, filed Mar. 18, 2005, Sandhu et al.
U.S. Appl. No. 11/131,552, filed May 18, 2005, Manning.
U.S. Appl. No. 11/131,575, filed May 18, 2005, Manning.
U.S. Appl. No. 11/196,593, filed Aug. 2, 2005, Sandhu et al.
U.S. Appl. No. 11/272,232, filed Nov. 10, 2005, Manning et al.
U.S. Appl. No. 11/272,247, filed Nov. 10, 2005, Manning et al.
Kim, D.H. et al., “A Mechanically Enhanced Storage Node for Virtually Unlimited Height (MESH) Capacitor Aiming at Sub 70nm DRAMs”, IEEE Jan. 2004, pp. 69-72.
J. P. O'Sullivan et al.,The morphology and mechanism of formation of porous anodic films on aluminium, Proc. Roy. Soc. Lond. A, vol. 317, pp. 511-543 (1970).
S. Shingubara,Fabrication of nanomaterials using porous alumina templates, J. Nanoparticle Res., vol. 5, pp. 17-30 (2003).
S. Tan et al.,High Aspect Ration Microstructures on Porous Anodic Aluminum Oxide, IEEE, pp. 267-272 (1995).
J: Liang et al.,Nonlithographic Fabrication of Lateral Superlattices for Nanometric Electromagnetic-Optic. . . IEEE J. Selected Topics in Quantum Electr., vol. 8, No. 5, pp. 998-1008 (Sep./Oct. 2002).
V. V. Konovalov et al.,Chemistry of Materials, Chem. Mater., vol. 11, No. 8, pp. 1949-1951 (Aug. 1999).
J. Masuda et al.,Highly ordered nanochannel-array architecture in anodic alumina, App. Phys. Lett, vol. 71, No. 19, pp. 2770-2772 (Nov. 1997).
D. Crouse et al.,Self-Assembled Nanostructures Using Anodized Alumina Thin Films for Optoelectronic Applications, IEEE, pp. 234-235 (1999).
A. Nadeem et al.,Fabrication of Microstructures Using Aluminum Anodization Techniques, pp. 274-277 (pre-2004).
C. Y. Liu et al.,Ordered anodic alumina nanochannels on focused-ion-beam-prepatterned aluminum surfaces, Appl. Phys. Lett., vol. 78, No. 1, pp. 120-122 (Jan. 2001).
PCT/US2004/027898; Filed: Aug. 26, 2004; PCT Search Report mailed Feb. 28, 2005; 4 pp.
“Novel Robust Cell Capacitor (Leaning Exterminated Ring Type Insulator) And New Storage Node Contact (Top Spacer Contact) For 70nm DRAM Technology And Beyond”; Park et al.; 2004 Symposium on VLSI Technology Digest of Technical Papers; Jul. 2004; pp. 34-35.
Banhart,Aluminum Foams: On the Road to Real Applications, MRS Bulletin, pp. 290-295 (Apr. 2003).
Gibson et al.,Cellular Solids, MRS Bulletin, pp. 270-274 (Apr. 2003).
Green et al.,Cellular Ceramics: Intriguing Structures, Novel Properties, and Innovative Applications, MRS Bulletin, pp. 296-300 (Apr. 2003).
U.S. Appl. No. 10/656,732, filed Sep. 2003, Manning.
U.S. Appl. No. 10/733.181, filed Dec. 2003, Manning et al.
U.S. Appl. No. 10/894,633, filed Jul. 2004, Manning.
U.S. Appl. No. 10/928,931, filed Aug. 2004, Busch et al.
U.S. Appl. No. 10/929,037, filed Aug. 2004, Manning.
Green et al.,The Structural and Applications of Cellular Ceramics, Web Extra, 10 pages (Apr. 2003).
Karp et al.,Scaffolds for Tissue Engineering, MRS Bulletin, pp. 301-306 (Apr. 2003).
Kraynik,Foam Structure: From Soap Froth to Solid Foams, MRS Bulletin, pp. 275-276, (Apr. 2003).
Maire et al.,In Situ X-Ray Tomography Measurements of Deformation in Cellular Solids, MRS Bulletin, pp. 284-289 (Apr. 2003).
Oh et al.,Preparation and Pore-Characteristics Control of Nano-Porous Materials Using Organometallic Building Blocks, 4 Carbon Science, No. 1, pp. 1-9 (Mar. 2003).
Onck,Scale Effects in Cellular Metals, MRS Bulletin, pp. 279-283 (Apr. 2003).
Park et al.,Block Copolymer Lithography: Periodic Arrays of ˜1011Holes in 1 Square Centimeter, 276 Science, pp. 1401-1404 (May 30, 1997).
Tsukada et al.,Preparation and Application of Porous Silk Fibroin Materials, 54 Journal of Applied Polymer Science, pp. 507-514 (1994).

Affiliated with

Also associated with

Rating

Methods of forming pluralities of capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming pluralities of capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming pluralities of capacitors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3939235