Methods of forming patterns in semiconductor devices using...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

Reexamination Certificate

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C430S328000, C430S329000, C430S331000, C430S942000, C382S149000

Reexamination Certificate

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07553606

ABSTRACT:
Disclosed is a method of forming patterns in semiconductor devices by using photo resist patterns. These methods comprise forming photo resist patterns on a substrate. Inferior patterns are selected among the photo resist patterns. The inferior patterns are eliminated or shrunken by irradiating the selected inferior patterns with an electron beam.

REFERENCES:
patent: 5122387 (1992-06-01), Takenaka et al.
patent: 5942373 (1999-08-01), Chou et al.
patent: 09-292706 (1997-11-01), None
patent: 2004-095623 (2004-03-01), None
patent: 2005-302751 (2005-10-01), None
patent: 10-1999-0061118 (1999-07-01), None
patent: 10-2006-0010929 (2006-02-01), None
Office Action issued by Korean Intellectual Property Office on Feb. 21, 2007, corresponding to Korean Patent Application No. 10-2006-0016935.

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