Methods of forming non-volatile memory devices using...

Details Methods of forming non-volatile memory devices using... Methods of forming non-volatile memory devices using...

2006-03-09

2008-11-04

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S263000, C438S264000, C438S424000

Reexamination Certificate

active

07445994

ABSTRACT:
Flash memory devices are provided including an integrated circuit substrate and a stack gate structure on the integrated circuit substrate. A trench isolation region is provided on the integrated circuit substrate adjacent the stack gate structure. A portion of the stack gate structure adjacent a trench sidewall of the trench isolation region may include a first nitrogen doped layer.

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