Methods of forming non-volatile memory devices and devices...

Details Methods of forming non-volatile memory devices and devices... Methods of forming non-volatile memory devices and devices...

2006-10-23

2008-08-12

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S259000, C257S315000, C257SE21682

Reexamination Certificate

active

07410870

ABSTRACT:
Methods of forming non-volatile memory devices include steps to define features that enhance shielding of electronic interference between adjacent floating gate electrodes and improve leakage current and threshold voltage characteristics. These features also support improved leakage current and threshold voltage characteristics in string selection transistors that are coupled to non-volatile memory cells.

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