Methods of forming non-volatile memory device having...

Details Methods of forming non-volatile memory device having... Methods of forming non-volatile memory device having...

2008-03-04

2008-03-04

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C257S369000

Reexamination Certificate

active

07338860

ABSTRACT:
Embodiments of the present invention are directed to methods for forming non-volatile memory devices. A substrate is provided that has a cell region, a first peripheral region, and second peripheral region. A tunnel insulating layer and a preliminary blocking insulating layer are formed on the substrate in the cell region. A blocking insulating layer and a conductive layer are formed on the substrate in the cell region, the first peripheral region, and the second peripheral region. The conductive layer and the blocking insulating layer in the first and second peripheral regions are removed to expose at least a portion of the substrate in the first and second peripheral regions, while leaving the conductive layer and the blocking insulating layer in the cell region.

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S. M. Sze, Physics of Semiconductor Devices, 1981, Wiley-Interscience (John Wiley & Sons), Second Edition, Chapter 8.

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