Methods of forming non-volatile memory device

Details Methods of forming non-volatile memory device Methods of forming non-volatile memory device

2007-11-27

2009-11-03

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S006000, C438S311000, C438S954000, C438S508000, C438S508000, C438S508000, C438S258000

Reexamination Certificate

active

07611948

ABSTRACT:
A method of forming a non-volatile memory device includes forming first mask patterns, which can have relatively large distances therebetween. A distance regulating layer is formed that conformally covers the first mask patterns. Second mask patterns are formed in grooves on the distance regulating layer between the first mask patterns.

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Pavan et al., Proceedings of the IEEE, vol. 85, No. 8, Aug. 1997.

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