Methods of forming non-volatile memory arrays

Details Methods of forming non-volatile memory arrays Methods of forming non-volatile memory arrays

1997-03-20

1998-04-07

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438261, H01L 218247

Patent

active

057364443

ABSTRACT:
Methods of forming non-volatile memory arrays are described. In one implementation, at least two adjacent laterally spaced apart word lines having floating gates are formed over a semiconductor material substrate. The word lines have respective lateral width dimensions. An insulating material is formed over the word lines and effectively completely covers individual word line tops. Masking material is formed over the insulating material to overlie less than all of each word line's lateral width dimension. The insulating material is etched to a degree sufficient to leave discrete insulating blocks over only a portion of the respective word lines' lateral width dimensions which include the laterally closest portions of the two word lines.

REFERENCES:
patent: 5229326 (1993-07-01), Dennison
patent: 5270240 (1993-12-01), Lee
patent: 5427966 (1995-06-01), Komori
patent: 5484741 (1996-01-01), Bergemont

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