Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1998-10-30
2000-11-21
Elms, Richard
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438682, 438683, 438686, H01L 213205, H01L 214763
Patent
active
061502499
ABSTRACT:
Integrated circuit contact structures are fabricated by forming a first layer comprising niobium (Nb) on a silicon substrate and forming a second layer comprising a near noble metal on the first layer, opposite the silicon substrate. The near noble metal, also referred to as a Group VIII metal, is preferably cobalt (Co). The near noble metal has higher diffusion coefficient than the niobium and the silicon substrate. Annealing is then performed to diffuse at least some of the near noble metal through the first layer and react the diffused near noble metal with the silicon substrate to form a third layer comprising a near noble metal silicide, and to form a fourth layer comprising niobium-near noble metal alloy on the third layer. It has been found that the use of niobium can reduce substrate consumption compared to conventional cobalt titanium double-metal silicide fabrication processes. The annealing step is preferably performed in a nitrogen containing ambient to also form a fifth layer comprising niobium nitride on the fourth layer, opposite the third layer. Moreover, when a native oxide layer is included on the silicon substrate, the annealing step can react the niobium with the native oxide and thereby remove the native oxide layer.
REFERENCES:
patent: 5449642 (1995-09-01), Tan et al.
patent: 5624869 (1997-04-01), Agnello et al.
patent: 5668040 (1997-09-01), Byun
patent: 5780349 (1998-07-01), Naem
patent: 5989988 (1999-11-01), Iinuma et al.
Matsubara et al., "Activation Energy for the C49-to-C54 Phase Transition of Polycrystalline TiSi .sub.2 Films With Under 30nm Thickness", Mat. Res. Soc. Symp. Proc., vol. 311, 1993, pp. 263-268.
Maex et al., "Degradation of Doped Si Region Contacted With Transition-Metal Silicides Due to Metal-Dopant Compound Formation", J. Appl. Phys., vol. 66, No. 11, Dec. 1, 1989, pp. 5327-5334.
Broadbent et al., "Application of Self-Aligned CoSi.sub.2 Interconnection in Sub-Micron CMOS Transistors", V-MIC Conf. Jul. 13-14, 1988, pp. 175-182.
Wolf et al., "Refractory Metals and Their Silicides in VLSI Fabrication", Ch. 11, Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, 1986, pp. 384-406.
Bae Dae-Lok
Kim Young-Wug
Kwon Young-Jae
Lee Chong-Mu
Elms Richard
Samsung Electronics Co,. Ltd.
Smith Bradley K.
LandOfFree
Methods of forming niobium-near noble metal contact structures f does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of forming niobium-near noble metal contact structures f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming niobium-near noble metal contact structures f will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1256540