Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-02-03
2009-10-20
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S413000, C438S422000, C438S424000
Reexamination Certificate
active
07605025
ABSTRACT:
A Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) can be formed by growing an epitaxial semiconductor layer on an upper surface of a sacrificial crystalline structure and on a substrate to form a buried sacrificial structure. The buried sacrificial structure can be removed to form a void in place of the buried sacrificial structure and a device isolation layer can be formed in the void.
REFERENCES:
patent: 6071783 (2000-06-01), Liang et al.
patent: 6448115 (2002-09-01), Bae
patent: 6649979 (2003-11-01), Jang
patent: 6858505 (2005-02-01), Park
patent: 6936875 (2005-08-01), Sugii et al.
patent: 6964911 (2005-11-01), Orlowski et al.
patent: 7033868 (2006-04-01), Nakamura et al.
patent: 7091072 (2006-08-01), Park et al.
patent: 2002/0034841 (2002-03-01), Lee
patent: 2002/0048896 (2002-04-01), Tseng
patent: 2002/0072206 (2002-06-01), Chen et al.
patent: 2003/0102499 (2003-06-01), Fujiwara
patent: 2003/0173617 (2003-09-01), Sato et al.
patent: 2004/0140520 (2004-07-01), Kim et al.
patent: 2005/0098094 (2005-05-01), Oh et al.
patent: 2006/0115941 (2006-06-01), Shin
patent: 2006/0170011 (2006-08-01), Irisawa et al.
patent: 2007/0072380 (2007-03-01), Wirbeleit et al.
patent: 04-249372 (1992-09-01), None
patent: 09-045904 (1997-02-01), None
patent: 1020000041698 (2000-07-01), None
patent: 1020000056248 (2000-09-01), None
Kim Dong-won
Kim Min-sang
Kim Sung-min
Oh Chang-woo
Yeo Kyoung-hwan
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
Thomas Toniae M
Wilczewski M.
LandOfFree
Methods of forming MOSFETS using crystalline sacrificial... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of forming MOSFETS using crystalline sacrificial..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming MOSFETS using crystalline sacrificial... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4069365