Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-06-10
2008-06-10
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S629000, C438S637000, C438S638000, C438S640000, C438S643000, C438S653000, C438S667000, C438S668000, C438S672000, C438S675000, C257S758000, C257S759000, C257S760000
Reexamination Certificate
active
07384866
ABSTRACT:
A metal interconnection of a semiconductor device is fabricated by forming a dielectric pattern including a hole therein on a substrate, and forming a barrier metal layer in the hole and on the dielectric layer pattern outside the hole. At least some of the barrier metal layer is oxidized. An anti-nucleation layer is selectively formed on the oxidized barrier metal layer outside the hole that exposes the oxidized barrier metal layer in the hole. A metal layer then is selectively formed on the exposed oxidized barrier layer in the hole.
REFERENCES:
patent: 3921282 (1975-11-01), Cunningham et al.
patent: 4820393 (1989-04-01), Brat et al.
patent: 4976839 (1990-12-01), Inoue
patent: 5070036 (1991-12-01), Stevens
patent: 5254872 (1993-10-01), Yoda et al.
patent: 5371042 (1994-12-01), Ong
patent: 5378660 (1995-01-01), Ngan et al.
patent: 5514908 (1996-05-01), Liao et al.
patent: 5637533 (1997-06-01), Choi
patent: 5696017 (1997-12-01), Ueno
patent: 5911857 (1999-06-01), Kim
patent: 5939787 (1999-08-01), Lee
patent: 6001420 (1999-12-01), Mosely et al.
patent: 6090702 (2000-07-01), Okamoto
patent: 6139700 (2000-10-01), Kang et al.
patent: 6143645 (2000-11-01), Hsu et al.
patent: 6156383 (2000-12-01), Ishii et al.
patent: 6217721 (2001-04-01), Xu et al.
patent: 6229211 (2001-05-01), Kawanoue et al.
patent: 6271592 (2001-08-01), Kim et al.
patent: 6284591 (2001-09-01), Lee
patent: 6346746 (2002-02-01), Agarwal
patent: 6348402 (2002-02-01), Kawanoue et al.
patent: 6376355 (2002-04-01), Yoon et al.
patent: 6391769 (2002-05-01), Lee et al.
patent: 6455430 (2002-09-01), Abe
patent: 6569756 (2003-05-01), Sugai
patent: 6602782 (2003-08-01), Lee et al.
patent: 6638852 (2003-10-01), Karp
patent: 6677197 (2004-01-01), Kudelka et al.
patent: 6780764 (2004-08-01), Morita et al.
patent: 6872642 (2005-03-01), Oda et al.
patent: 6955983 (2005-10-01), Yun et al.
patent: 7279414 (2007-10-01), Yin et al.
patent: 2001/0012685 (2001-08-01), Li
patent: 2001/0013617 (2001-08-01), Toyoda et al.
patent: 2001/0014529 (2001-08-01), Chen et al.
patent: 2002/0090811 (2002-07-01), Kim et al.
patent: 2002/0137321 (2002-09-01), Ku et al.
patent: 2002/0187631 (2002-12-01), Kim et al.
patent: 2003/0011014 (2003-01-01), Basceri et al.
patent: 2003/0119303 (2003-06-01), Morita et al.
patent: 0 898 308 (1999-02-01), None
patent: 405121356 (1991-09-01), None
patent: 406061359 (1994-03-01), None
patent: 11087272 (1999-03-01), None
patent: 2000235978 (2000-08-01), None
patent: 2001053027 (2001-02-01), None
patent: 2001210606 (2001-08-01), None
patent: 2003022985 (2003-01-01), None
patent: 96-8556 (1996-06-01), None
patent: 1998-041043 (1999-05-01), None
patent: 100214526 (1999-05-01), None
patent: 2000-0012027 (2000-02-01), None
patent: 10-20020028337 (2002-04-01), None
patent: WO 00/63959 (2000-10-01), None
Notice to Submit Response, Korean Application No. 10-2002-0030294, May 6, 2004.
Choi Gil-heyun
Kim Byung-hee
Lee Jong-Myeong
Seo Jung-Hun
Yang Seung-gil
Jr. Carl Whitehead
Mitchell James M
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
LandOfFree
Methods of forming metal interconnections of semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of forming metal interconnections of semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming metal interconnections of semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2811259