Methods of forming metal interconnect structures on...

Details Methods of forming metal interconnect structures on... Methods of forming metal interconnect structures on...

2008-03-18

2010-06-15

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S645000, C438S687000, C257SE21579, C257SE21496

Reexamination Certificate

active

07737029

ABSTRACT:
Methods of forming devices include forming a first electrically insulating layer having a metal interconnection therein, on a substrate and then forming a first electrically insulating barrier layer on an upper surface of the metal interconnection and on the first electrically insulating layer. The first electrically insulating barrier layer is exposed to a plasma that penetrates the first electrically insulating barrier and removes oxygen from an upper surface of the metal interconnection. The barrier layer may have a thickness in a range from about 5 Å to about 50 Å and the plasma may be a hydrogen-containing plasma that converts oxygen on the upper surface of the metal interconnection to water.

REFERENCES:
patent: 6165894 (2000-12-01), Pramanick et al.
patent: 6225210 (2001-05-01), Ngo et al.
patent: 6333248 (2001-12-01), Kishimoto
patent: 6383925 (2002-05-01), Ngo et al.
patent: 6656832 (2003-12-01), Pan et al.
patent: 6734101 (2004-05-01), Bao et al.
patent: 6734102 (2004-05-01), Rathi et al.
patent: 6764940 (2004-07-01), Rozbicki et al.
patent: 6764952 (2004-07-01), Yu et al.
patent: 6797608 (2004-09-01), Lin
patent: 6797642 (2004-09-01), Chu et al.
patent: 6875694 (2005-04-01), Ngo et al.
patent: 6897144 (2005-05-01), Ngo et al.
patent: 6897147 (2005-05-01), Tsai et al.
patent: 6927159 (2005-08-01), Faust et al.
patent: 6946401 (2005-09-01), Huang et al.
patent: 7037835 (2006-05-01), Lee et al.
patent: 7037836 (2006-05-01), Lee
patent: 7094705 (2006-08-01), Lin et al.
patent: 7122484 (2006-10-01), Perng et al.
patent: 7158384 (2007-01-01), Yim et al.
patent: 7163889 (2007-01-01), Yu et al.
patent: 7205666 (2007-04-01), Lee et al.
patent: 7232766 (2007-06-01), Bailey, III et al.
patent: 7239017 (2007-07-01), Yu et al.
patent: 7282438 (2007-10-01), Yu et al.
patent: 2001/0049181 (2001-12-01), Rathi et al.
patent: 2003/0209738 (2003-11-01), Ohto et al.
patent: 2004/0161924 (2004-08-01), Chen et al.
patent: 2004/0175933 (2004-09-01), Shishida et al.
patent: 1020020053609 (2002-07-01), None
patent: 1020030030268 (2003-04-01), None
patent: 1020030052487 (2003-06-01), None

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