Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-08-20
1998-12-22
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438250, 438381, H01L 218234
Patent
active
058518681
ABSTRACT:
Methods of forming decoupling capacitors include the steps of forming an insulated first capacitor electrode on a first portion of a face of a semiconductor substrate containing a region of first conductivity type therein extending to the first portion of the face. A second capacitor electrode is formed on the insulated first capacitor electrode, opposite the region of first conductivity type. Inversion-layer charge source regions of second conductivity type are formed in the region of first conductivity type, so that second conductivity type charges carriers can be supplied to the first portion of the face when the first capacitor electrode is appropriately biased. A first capacitor contact is formed to electrically contact the insulated first capacitor electrode and a second capacitor contact is also formed to electrically connect the second capacitor electrode to the inversion-layer charge source regions.
REFERENCES:
patent: 4700457 (1987-10-01), Matsukawa
patent: 5350705 (1994-09-01), Brassington et al.
patent: 5439840 (1995-08-01), Jones, Jr. et al.
patent: 5472900 (1995-12-01), Vu et al.
patent: 5587333 (1996-12-01), Johansson et al.
Samsung Electronics Co,. Ltd.
Tsai Jey
LandOfFree
Methods of forming integrated decoupling capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of forming integrated decoupling capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming integrated decoupling capacitors will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2046821