Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-11
2006-04-11
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S106000
Reexamination Certificate
active
07026208
ABSTRACT:
An integrated circuit device includes a semiconductor substrate that has a cell region and a peripheral region that surrounds the cell region. A plurality of capacitors that include a plurality of lower electrodes, respectively, are disposed in the cell region. Supporters connect adjacent ones of the plurality of lower electrodes to provide structural support and stability to the lower electrodes.
REFERENCES:
patent: 2001-4798 (2001-01-01), None
patent: 2001-87943 (2001-09-01), None
patent: 2002-6333 (2002-01-01), None
Notice to Submit Response issued Feb. 28, 2004 for Korean Application No. 10-2002-0015385.
Hwang Yoo-sang
Jung Hoon
Park Byung-jun
Myers Bibel Sibley & Sajovec, P.A.
Pham Long
Samsung Electronics Co,. Ltd.
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