Methods of forming integrated circuit devices having a...

Details Methods of forming integrated circuit devices having a... Methods of forming integrated circuit devices having a...

2007-03-06

2007-03-06

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21660

Reexamination Certificate

active

10880919

ABSTRACT:
An integrated circuit device is formed by forming a resistor pattern on a substrate. An interlayer dielectric layer is formed on the resistor pattern. The interlayer dielectric layer is patterned to form at least one opening that exposes the resistor pattern. A plug pattern is formed that fills the at least one opening and the plug pattern and resistor pattern are formed using a same material.

REFERENCES:
patent: 6159799 (2000-12-01), Yu

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