Methods of forming high dielectric capacitors

Details Methods of forming high dielectric capacitors Methods of forming high dielectric capacitors

1998-04-08

2000-02-15

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438250, 438253, H01L 218242

Patent

active

060252235

ABSTRACT:
Capacitors and methods of fabricating high dielectric capacitors which do not create a step difference where the high dielectric material is formed are provided. These methods include forming a first electrode layer on an integrated circuit device substrate and a layer of high dielectric material on the first electrode layer opposite the integrated circuit device substrate. A second electrode layer is formed on the layer of high dielectric material opposite the first electrode layer. The first electrode layer, the high dielectric layer and the second electrode layer are patterned to form a capacitor cell unit having a sidewall which extends from the first electrode beyond the layer of high dielectric material and to the second electrode layer. An insulating spacer is formed on the sidewall of the capacitor cell unit extending from the first electrode layer to the second electrode layer.

REFERENCES:
patent: 5206788 (1993-04-01), Larson et al.
patent: 5382817 (1995-01-01), Kashihara et al.
patent: 5420073 (1995-05-01), DiGiacomo et al.
patent: 5536672 (1996-07-01), Miller et al.
patent: 5559733 (1996-09-01), McMillan et al.
patent: 5567964 (1996-10-01), Kashihara et al.
patent: 5654222 (1997-08-01), Sandhu et al.
patent: 5717236 (1998-02-01), Shinkawata
patent: 5786248 (1998-07-01), Schuegraf
patent: 5786259 (1998-07-01), Kang
patent: 5812360 (1998-09-01), Sandhu et al.
patent: 5814852 (1998-09-01), Sandhu et al.
patent: 5834348 (1998-11-01), Kwon et al.
patent: 5858851 (1999-01-01), Yamagata et al.

Affiliated with

Also associated with

Rating

Methods of forming high dielectric capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming high dielectric capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming high dielectric capacitors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1905275