Methods of forming hemispherical grained silicon layers includin

Details Methods of forming hemispherical grained silicon layers includin Methods of forming hemispherical grained silicon layers includin

1997-12-03

1999-03-23

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, 438398, H01L 218242

Patent

active

058858679

ABSTRACT:
A method of forming a hemispherical grained silicon layer includes the step of forming a first amorphous silicon layer on an integrated circuit substrate by exposing the integrated circuit substrate to a first atmosphere including a silicon source gas and an anti-nucleation gas. A hemispherical grained silicon layer is formed on the amorphous silicon layer opposite the substrate. The anti-nucleation gas can be nitrogen oxide or oxygen.

REFERENCES:
patent: 5234862 (1993-08-01), Aketagawa et al.
patent: 5366917 (1994-11-01), Watanabe et al.
patent: 5372962 (1994-12-01), Hirota et al.
patent: 5385863 (1995-01-01), Tatsumi et al.
patent: 5394012 (1995-02-01), Kimura
patent: 5405801 (1995-04-01), Han et al
patent: 5464791 (1995-11-01), Hirota
patent: 5486488 (1996-01-01), Kamiyama
patent: 5543347 (1996-08-01), Kawano et al.
patent: 5554557 (1996-09-01), Koh
patent: 5567637 (1996-10-01), Hirota
patent: 5590051 (1996-12-01), Yokozama
patent: 5595937 (1997-01-01), Mikagi
patent: 5616511 (1997-04-01), Hirota
patent: 5623243 (1997-04-01), Watanabe et al.
patent: 5639689 (1997-06-01), Woo
patent: 5661340 (1997-08-01), Ema et al.
patent: 5663085 (1997-09-01), Tanigawa
patent: 5753559 (1998-05-01), Yew et al.
patent: 5821152 (1998-10-01), Han et al.
patent: 5830793 (1998-11-01), Schuegraf et al.
H. Watanabe et al., Hemispherical Grained Silicon (HSG-Si) Formation On In-Situ Phosphorous Doped Amorphous-Si Using The Seeding Method, Extended Abstracts of the 1992 International Conference in Solid State Devices and Materials, Tsukuba, Aug. 26-28, 1992, pp. 422-424.
H. Watanabe et al., An Advanced Fabrication Technology Of Hemispherical Grained (HSG) Poly-Si For High Capacitance Storage Electrodes, Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, Yokohama, Aug. 27-29, 1991, pp. 478-480.
H. Watanabe et al., A New Cylindrical Capacitor Using Hemispherical Grained Si (HSG-Si) For 256Mb DRAMs, 1992 IEEE, IEDM 92, 10.1.1-10.1.4, pp. 259-262.

Affiliated with

Also associated with

Rating

Methods of forming hemispherical grained silicon layers includin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming hemispherical grained silicon layers includin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming hemispherical grained silicon layers includin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2124646