Methods of forming gate structures in nonvolatile memory...

Details Methods of forming gate structures in nonvolatile memory... Methods of forming gate structures in nonvolatile memory...

2005-11-29

2005-11-29

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S315000

Reexamination Certificate

active

06969650

ABSTRACT:
Gate structures of a non-volatile integrated circuit memory device can include a thermal oxidation layer on a substrate beneath the gate structure that defines a side wall of the gate structure. An oxygen diffusion barrier layer is on the side wall of the gate structure and a floating gate is on the thermal oxidation layer and has a curved side wall portion. Related methods are also discussed.

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English Translation of Official Letter from German Patent Office; German Patent Application No. 103 41 062.7-33, dated Dec. 6, 2004.
English Translation of Korean Office Action; Korean Patent Application No. 10-2002-0054460, Date of Korean Office Action Jul. 30, 2004.

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