Methods of forming flash memory devices including blocking...

Details Methods of forming flash memory devices including blocking... Methods of forming flash memory devices including blocking...

2007-05-31

2010-10-26

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S591000, C257SE21423

Reexamination Certificate

active

07820514

ABSTRACT:
A method of forming a flash memory device can include forming a tunneling oxide film on a semiconductor substrate, forming a charge storing layer on the tunneling oxide film, forming a first blocking oxide film on the charge storing layer at a first temperature, forming a second blocking oxide film on the first blocking oxide film at a second temperature higher than the first temperature, and forming a gate electrode on the second blocking oxide film.

REFERENCES:
patent: 6548422 (2003-04-01), Roy et al.
patent: 2004/0264236 (2004-12-01), Chae et al.
patent: 11-040682 (1999-02-01), None
patent: 2006-237311 (2006-09-01), None
patent: 10-2000-0001261 (2000-01-01), None

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