Methods of forming field effect transistors having self-aligned

Details Methods of forming field effect transistors having self-aligned Methods of forming field effect transistors having self-aligned

1998-09-25

2000-12-19

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438558, 438564, 438697, H01L 21336

Patent

active

061626902

ABSTRACT:
Methods of forming field effect transistors include the steps of forming an insulated gate electrode on a face of a substrate containing a semiconductor region therein extending to the face. A conductive layer of first conductivity type is also formed on the face and on a sidewall and upper surface of the insulated gate electrode. Dopants of first conductivity type are then diffused from the conductive layer into the semiconductor region to define source and drain regions of first conductivity type therein which are self-aligned to the insulated gate electrode. A step is also performed to remove a portion of the conductive layer to thereby define an intermediate source/drain contact (which is also self-aligned to the insulated gate electrode) and expose the upper surface of the insulated gate electrode. An electrode is then formed in contact with the intermediate source/drain contact.

REFERENCES:
patent: 5312768 (1994-05-01), Gonzalez
patent: 5409853 (1995-04-01), Yu
patent: 5462888 (1995-10-01), Chiu et al.
patent: 5637518 (1997-06-01), Prall et al.
patent: 5668027 (1997-09-01), Hashimoto et al.
patent: 5827768 (1998-10-01), Lin et al.
patent: 5879976 (1999-03-01), Fujiwara
patent: 5970352 (1999-10-01), Shiozawa et al.
Wolf, S.; Silicon Processing for the VLSI Era vol. 2: Process Integration, Sunset Beach, CA, 1990, p. 65.
Togo et al., "Novel Deep Sub-Quarter Micron PMOSFETs with Ultra-Shallow Junctions Utilizing Boron Diffusion from Poly-Si/Oxide (BDSOX)", IEEE, 1994 Symposium on VLSI Technology Digest of Technical Papers, pp. 21-22.

Affiliated with

Also associated with

Rating

Methods of forming field effect transistors having self-aligned does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming field effect transistors having self-aligned , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming field effect transistors having self-aligned will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-270677