Methods of forming ferroelectric capacitors with metal oxide...

Details Methods of forming ferroelectric capacitors with metal oxide... Methods of forming ferroelectric capacitors with metal oxide...

2005-03-29

2005-03-29

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S393000, C438S637000, C438S650000, C438S675000, C438S770000

Reexamination Certificate

active

06872618

ABSTRACT:
A method of forming a ferroelectric capacitor includes forming a lower electrode on a substrate. The lower electrode is oxidized to form a metal oxide film. A ferroelectric film is formed on the metal oxide film while reduction of the oxygen content of the metal oxide film is inhibited. An upper electrode is formed on the ferroelectric film.

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Translation of Korean Notice to File a Response/Amendment to the Examination Report for Korean Application No.: 10-2002-0035929; dated Jul. 30, 2004.

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